By Vassil Palankovski,Rüdiger Quay
The subject of this monograph is the actual modeling of heterostructure units. a close dialogue of actual types and parameters for compound semiconductors is gifted together with the proper elements of contemporary submicron heterostructure units. greater than 25 simulation examples for various sorts of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and excessive electron mobility transistors (HEMTs) are given compared to experimental facts from state of the art devices.
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Analysis and Simulation of Heterostructure Devices (Computational Microelectronics) by Vassil Palankovski,Rüdiger Quay